Higher Uniformity Thermal Oxide Wafer Excellent Dielectric Layer As An Insulator

Thermal Oxide Wafer, higher uniformity, and higher dielectric strength , excellent dielectric layer as an insulator

Thermal oxide or silicon dioxide layer is formed on bare silicon surface at elevated temperature in the presence of an oxidant , the process is called thermal oxidation. Thermal oxide is normally grown in a horizontal tube furnace , at temperature range from 900°C ~ 1200°C , using either a "Wet" or "Dry" growth method . Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator . In most silicon- based devices, thermal oxide layer play an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics . we provides thermal oxide wafer in diameter from 2" to 12 " , we always choose prime grade and defect free silicon wafer as substrate for growing high uniformity thermal oxide layer to meet your specific requirements . Contact us for further information on price & delivery time .

Thermal Oxide Capability

Typically after thermal oxidation process , both front side and back side of silicon wafer have oxide layer . In case only one side oxide layer is required , we can remove back oxide and offer one side thermal oxide wafer for you .

Thermal Oxide Wafer Application

Higher Uniformity Thermal Oxide Wafer

Thermal Oxide Wafer as Insulator

2" thermal oxide silicon wafer

Higher Uniformity Thermal Oxide Wafer Excellent Dielectric Layer As An Insulator Images